Automated design of single-electron nanoshem
DOI:
https://doi.org/10.18372/2073-4751.2.7714Keywords:
наноелектроніка, одноелектронні схеми, мажоритарні елементиAbstract
A nanoshemu based single-electron transistors using pyatyvhodovoho majority element for computer simulation of complete digit adder
References
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Amir Sahafi, Keivan Navi, “A novel five-input configurable cell based on single electron transistor minority gates”.
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Wasshuber C. 1997. SIMON – A simulator for single-electron tunnel and circuits. IEEE Trans. On Computer aided design, 16. Р. 937–944.
Пакулов Н. И. Мажоритарный принцип построения надежных узлов и устройств ЦВМ/Н. И. Пакулов. – М.: Сов. радио, 1974, – 184 с.
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