Physical model of artificial molecular memory based on two types of organic compounds

Abstract

This paper describes the developed hypothetical physical model of artificial molecular memory based on two types of organic compounds - phenol and indole derivatives, which can potentially be used to perform the functions of memory in nano-electronic devices. The developed physical model demonstrated the properties of artificial "memory". It was similar to other prototypes made with quinoline molecules and/or nitro aniline oligo derivatives (phenylene ethylene), but we used other types of molecules - a mixture of phenol and indole derivatives with substitutes - polyamine chains of different length and complexity (JSTX-3, AR, ARN-1, ARN-2). The systems we developed were formed by layering 2D and/or 3D sets of layers of organic substances that could be replaced. Layers with isotropic and anisotropic properties should alternate. Functional tests of such samples were performed by recording the electric ionic currents that passed through them. The currents were asymmetric depending on whether they flowed along the polyamine chain "to" or "from" the phenolic cycle. To record and test such elementary electric currents, patch-clamp methods and registration of transmembrane ionic currents in the potential fixation mode were used. Some of obtained data were preliminary and a great further work is necessary to produce the industrial samples. The proposed method allows to modify and create new memory elements of natural and artificial origin, as well as to test their functioning by the registration of electric currents through the formed sample. The recorded currents were asymmetric, demonstrating the memory properties of the sample. Developed methods and devices were protected by patents of Ukraine. New possibilities of coding and protection of information on the basis of physical model of obtained results were described as well.