Automated Technological Design оf Nanoscale Transistors

Abstract

The article is devoted to the automation of technological preparation of modern high-frequency and energy-efficient bipolar transistors with nanoscale depths of impurity implantation into a nanoconductor substrate. At the stage of mathematical modeling of technological operations of multilayer casting, the known theoretical and empirical, developed by the authors of the article, high-temperature dependences of doping parameters, distributions of depths of boundary distances of emitter and collector junctions, which, as a result, determine the thickness of the electrically neutral base region of the transistor, are taken into account. Mathematical models of technological parameters of surface and volume concentrations of impurities, which cause degeneration and repeated inversion of the conductivity types of the initial crystalline substrate, are proposed. The maximum possible values of the tincture and solution of acceptor and donor impurities, which increase the gain coefficients and reduce the power consumption of bipolar nanotransistors, are determined. The drift components of the base and collector currents, which are caused by the internal electric field of the inhomogeneous base, are taken into account. The temperature and time dependences of technological doping operations are found, which primarily determine the creation of bipolar transistors with a base thickness from 100 nm to 10 nm. The values of the limiting concentrations of impurities in semiconductor structures are established. Examples are considered that confirm the effectiveness of the proposed methods for automated design of bipolar nanotransistors. In the future, it is planned to develop generalized algorithms for multi-level hierarchical modeling of transistor nanoelectronics components.